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R1EX25512ASA00A/R1EX25512ATA00A
Memory cell characteristics
(V CC = 1.8 V to 5.5 V)
Ta=25 ° C
Ta=85 ° C
Notes
Endurance
Data retention
1,000k Cycles min.
100 Years min.
100k Cycles min.
10 Years min.
1
1
Notes: 1. Not 100 % tested
Data at shipment
? Memory array : “ 1 ” (FF Hex)
? Status register SRWD, BP0, BP1: “ 0 ”
DC Characteristics
Parameter
Input leakage current
Output leakage current
Symbol
I LI
I LO
Min
?
?
Max
2
2
Unit
μ A
μ A
Test conditions
V CC = 5.5 V, V IN = 0 to 5.5 V
( S , D, C, HOLD , W )
V CC = 5.5 V, V OUT = 0 to 5.5 V
(Q)
V CC current
Standby
I SB
?
5
μ A
V IN = V SS or V CC , S = V CC
V CC = 5.5 V
Active
I CC1
?
3
mA
V CC = 3.3 V, Read at 5 MHz
V IN = V CC × 0.1 / V CC × 0.9
Q = OPEN
?
5
mA
V CC = 5.5 V, Read at 5 MHz
V IN = V CC × 0.1 / V CC × 0.9
Q = OPEN
I CC2
?
3
mA
V CC = 3.3 V, Write at 5 MHz
V IN = V CC × 0.1 / V CC × 0.9
?
5
mA
V CC = 5.5 V, Write at 5 MHz
V IN = V CC × 0.1 / V CC × 0.9
Output voltage
V OL1
V OL2
V OH1
V OH2
?
?
V CC × 0.8
V CC × 0.8
0.4
0.4
?
?
V
V
V
V
V CC = 2.5 to 5.5 V, I OL = 2 mA
V CC = 1.8 to 2.5 V, I OL = 1.5 mA
V CC = 2.5 to 5.5 V, I OH = ? 2 mA
V CC = 1.8 to 2.5 V, I OH = ? 0.4 mA
R10DS0046EJ0200 Rev.2.00
Oct.04, 2010
Page 4 of 20
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